KVA-CCP4000L > ALD
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제품 정보
제품 상세설명
Overview
Korea Vacuum Tech, Ltd. (KVT) is proud to introduce the latest revolutionary addition to
our product line, the ALD system.
ALD has the such advantages over other conventional deposition methods as excellent
uniform thickness, low processing temperature, and precise film thickness control.
ICP plasma enhanced atomic layer deposition has many advantages, such
as the wide process window, high film density, low impurity contents, and broad choice
of precursor chemistry and/or reactants compared to the conventional ALD and metal
organic atomic layer deposition (MOALD)Methods. KVA-4000 series is designed and
developed to unique hot wall, top flow, dual-chamber and also, KVAC-4000,
KVA-ICP4000 series, KVA-CCP4000 series has the deposition of highest quality film with
excellent uniformity.
Overview
Korea Vacuum Tech, Ltd. (KVT) is proud to introduce the latest revolutionary addition to
our product line, the ALD system.
ALD has the such advantages over other conventional deposition methods as excellent
uniform thickness, low processing temperature, and precise film thickness control.
ICP plasma enhanced atomic layer deposition has many advantages, such
as the wide process window, high film density, low impurity contents, and broad choice
of precursor chemistry and/or reactants compared to the conventional ALD and metal
organic atomic layer deposition (MOALD)Methods. KVA-4000 series is designed and
developed to unique hot wall, top flow, dual-chamber and also, KVAC-4000,
KVA-ICP4000 series, KVA-CCP4000 series has the deposition of highest quality film with
excellent uniformity.
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Specifications
제품 Specifications
Specifications (CCP type)
ITEM
SPECIFICATIONS
Chamber
Process & Loadlock Chamber
Substrate size
Piece to 6 inches
Substrate Heating
Temperature range: up to 752°F (400°F)
Temperature Uniformity: ±41°F (±5°C)
Base Pressure & Operation Pressure
Less than 1.0E-3 Torr: Rotary or Dry pump
Less than 1.0E-6 Torr: Turbo Molecular Pump (Option)
Process < 10 Torr: Rotary or Dry pump
Plasma Source
CCP Type: RF Power: 300W
Gas Nozzle
2 channel
Precursors
Up to 2, Temperature: 250°C (Jacket)
Mass flow controller
Precusor: Ar(Bubbling) / Purge: Ar or N2
Reactant(Plasma): O2, NH3, H2, etc..
Auto Pressure Controller
Throttle valve & Baratron Sensor
Specifications (CCP type)
ITEM
SPECIFICATIONS
Chamber
Process & Loadlock Chamber
Substrate size
Piece to 6 inches
Substrate Heating
Temperature range: up to 752°F (400°F)
Temperature Uniformity: ±41°F (±5°C)
Base Pressure & Operation Pressure
Less than 1.0E-3 Torr: Rotary or Dry pump
Less than 1.0E-6 Torr: Turbo Molecular Pump (Option)
Process < 10 Torr: Rotary or Dry pump
Plasma Source
CCP Type: RF Power: 300W
Gas Nozzle
2 channel
Precursors
Up to 2, Temperature: 250°C (Jacket)
Mass flow controller
Precusor: Ar(Bubbling) / Purge: Ar or N2
Reactant(Plasma): O2, NH3, H2, etc..
Auto Pressure Controller
Throttle valve & Baratron Sensor
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Options
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Control
제품 Control
System Control
Vacuum
This screen shows the vacuum screen. This screen
consists of each valve, pump action button, automatic
button. The automatic function provides convenience
to the user. if you proceed with these buttons in
sequence, one sample will be completed.
Recipe
The figure shows the recipe screen. This screen
contains boxes for entering the process conditions
required for deposition. Input all the boxes and press
the Process button to automatically deposit according to the
input process conditions.
Process
The figure shows the process screen. This screen shows
the buttons that can control the gas flow rate, valve,
power etc. required for the process.
Transfer
The figure shows the Transfer screen. In this screen, there
are buttons that allow you to manipulate the part you will use
to move samples from the load lock chamber to the
process chamber , such as the loading arm, z-motion.
Graph
The figure shows the graph screen. This screen shows
vacuum degree, power amount, deposition rate, thickness
and so on. You can record that data and make it into a
file and compare it with the previous data.
Message
The picture is a graph screen. The picture consists of status
message notification messages
System Control
Vacuum
This screen shows the vacuum screen. This screen
consists of each valve, pump action button, automatic
button. The automatic function provides convenience
to the user. if you proceed with these buttons in
sequence, one sample will be completed.
Recipe
The figure shows the recipe screen. This screen
contains boxes for entering the process conditions
required for deposition. Input all the boxes and press
the Process button to automatically deposit according to the
input process conditions.
Process
The figure shows the process screen. This screen shows
the buttons that can control the gas flow rate, valve,
power etc. required for the process.
Transfer
The figure shows the Transfer screen. In this screen, there
are buttons that allow you to manipulate the part you will use
to move samples from the load lock chamber to the
process chamber , such as the loading arm, z-motion.
Graph
The figure shows the graph screen. This screen shows
vacuum degree, power amount, deposition rate, thickness
and so on. You can record that data and make it into a
file and compare it with the previous data.
Message
The picture is a graph screen. The picture consists of status
message notification messages
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사용후기
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상품문의
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배송/교환정보
[배송]
배송 안내 입력전입니다.[교환]
교환/반품 안내 입력전입니다.
선택된 옵션
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KVA-CCP4000L+0원
