Overview
Korea Vacuum Tech, Ltd. (KVT) is proud to introduce the latest revolutionary addition to
our product line, the ALD system.
ALD has the such advantages over other conventional deposition methods as excellent
uniform thickness, low processing temperature, and precise film thickness control.
ICP plasma enhanced atomic layer deposition has many advantages, such
as the wide process window, high film density, low impurity contents, and broad choice
of precursor chemistry and/or reactants compared to the conventional ALD and metal
organic atomic layer deposition (MOALD)Methods. KVA-4000 series is designed and
developed to unique hot wall, top flow, dual-chamber and also, KVAC-4000,
KVA-ICP4000 series, KVA-CCP4000 series has the deposition of highest quality film with
excellent uniformity.
The KVAC-4000L system is a hybrid system that can process ALD process and CVD
process in one chamber. The ICP type ALD process and thermal CVD process
are sufficient to produce good quality films.
Overview
Korea Vacuum Tech, Ltd. (KVT) is proud to introduce the latest revolutionary addition to
our product line, the ALD system.
ALD has the such advantages over other conventional deposition methods as excellent
uniform thickness, low processing temperature, and precise film thickness control.
ICP plasma enhanced atomic layer deposition has many advantages, such
as the wide process window, high film density, low impurity contents, and broad choice
of precursor chemistry and/or reactants compared to the conventional ALD and metal
organic atomic layer deposition (MOALD)Methods. KVA-4000 series is designed and
developed to unique hot wall, top flow, dual-chamber and also, KVAC-4000,
KVA-ICP4000 series, KVA-CCP4000 series has the deposition of highest quality film with
excellent uniformity.
The KVAC-4000L system is a hybrid system that can process ALD process and CVD
process in one chamber. The ICP type ALD process and thermal CVD process
are sufficient to produce good quality films.
Specifications (ICP type)
ITEM |
SPECIFICATIONS |
Chamber |
Process & Loadlock Chamber |
Substrate size |
Piece to 6 inches |
Substrate Heating |
Temperature range: up to 752°F (400°F) Temperature Uniformity: ±41°F (±5°C) |
Base Pressure & Operation Pressure |
Less than 1.0E-3 Torr: Rotary or Dry pump
Less than 1.0E-6 Torr: Turbo Molecular Pump (Option) Process < 10 Torr: Rotary or Dry pump |
Plasma Source |
ICP or CCP Type: RF Power: 300W |
Gas Nozzle |
2 channel |
Precursors |
Up to 2, Temperature: 250°C (Jacket) |
Mass flow controller |
Precusor: Ar(Bubbling) / Purge: Ar or N2 Reactant(Plasma): O2, NH3, H2, etc.. |
Auto Pressure Controller |
Throttle valve & Baratron Sensor |
Specifications (ICP type)
ITEM |
SPECIFICATIONS |
Chamber |
Process & Loadlock Chamber |
Substrate size |
Piece to 6 inches |
Substrate Heating |
Temperature range: up to 752°F (400°F) Temperature Uniformity: ±41°F (±5°C) |
Base Pressure & Operation Pressure |
Less than 1.0E-3 Torr: Rotary or Dry pump Less than 1.0E-6 Torr: Turbo Molecular Pump (Option) Process < 10 Torr: Rotary or Dry pump |
Plasma Source |
ICP or CCP Type: RF Power: 300W |
Gas Nozzle |
2 channel |
Precursors |
Up to 2, Temperature: 250°C (Jacket) |
Mass flow controller |
Precusor: Ar(Bubbling) / Purge: Ar or N2 Reactant(Plasma): O2, NH3, H2, etc.. |
Auto Pressure Controller |
Throttle valve & Baratron Sensor |
System Control
Vacuum
This screen shows the vacuum screen. This screen consists of each valve, pump action button, automatic button. The automatic function provides convenience to the user. if you proceed with these buttons in sequence, one sample will be completed.
|
|
|
Recipe
The figure shows the recipe screen. This screen
contains boxes for entering the process conditions
required for deposition. Input all the boxes and
press the Process button to automatically deposit
according to the input process conditions. |
Process
The figure shows the process screen. This screen shows the buttons that can control the gas flow rate, valve, power etc. required for the process. |
|
|
Transfer
The figure shows the Transfer screen. In this screen, there are buttons that allow you to manipulate the part you will use to move samples from the load lock chamber to the process chamber, such as the loading arm, z-motion. |
Graph
The figure shows the graph screen.
This screen shows vacuum degree, power
amount, deposition rate, thickness and so on.
You can record that data and make it into a file and
compare it with the previous data.
|
|
|
Message
The picture is a graph screen. The picture consists of status message notification messages |
System Control
Vacuum
This screen shows the vacuum screen. This screen consists of each valve, pump action button, automatic button. The automatic function provides convenience to the user. if you proceed with these buttons in sequence, one sample will be completed.
|
|
|
Recipe
The figure shows the recipe screen. This screen
contains boxes for entering the process conditions
required for deposition. Input all the boxes and
press the Process button to automatically deposit
according to the input process conditions.
|
Process
The figure shows the process screen. This screen shows the buttons that can control the gas flow rate, valve, power etc. required for the process.
|
|
|
Transfer
The figure shows the Transfer screen. In this screen, there are buttons that allow you to manipulate the part you will use to move samples from the load lock chamber to the process chamber, such as the loading arm, z-motion.
|
Graph
The figure shows the graph screen.
This screen shows vacuum degree, power
amount, deposition rate, thickness and so on.
You can record that data and make it into a file and
compare it with the previous data.
|
|
|
Message
The picture is a graph screen. The picture consists of status message notification messages |