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ICP-RIE Series

ETCHER
VACUUM EQUIPMENTS

An Inductively Coupled Plasma (ICP) is a type of plasma source in which the energy is supplied by electrical currents produced by electromagnetic induction; that is, by time-varying magnetic fields.

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  • 제품 정보

    제품 상세설명

    Overview

     


     An Inductively Coupled Plasma (ICP) is a type of plasma source in which the energy is

     

    supplied by electrical currents produced by electromagnetic induction; that is, by time-

     

    varying magnetic fields. In its simplest form, an inductively coupled plasma consists of a

     

    vacuum vessel, into which the gas to be ionized is administered, and an induction coil,

     

    driven by a source of RF power. The coil is generally separated from the vacuum region

     

    by a dielectric window. The wide range of applications for RF-driven, inductively

     

    coupled plasma sources has recently expanded into processing tools for coating or

     

    etching systems in the microelectronics industry.

    Overview

     


     An Inductively Coupled Plasma (ICP) is a type of plasma source in which the energy is

     

    supplied by electrical currents produced by electromagnetic induction; that is, by time-

     

    varying magnetic fields. In its simplest form, an inductively coupled plasma consists of a

     

    vacuum vessel, into which the gas to be ionized is administered, and an induction coil,

     

    driven by a source of RF power. The coil is generally separated from the vacuum region

     

    by a dielectric window. The wide range of applications for RF-driven, inductively

     

    coupled plasma sources has recently expanded into processing tools for coating or

     

    etching systems in the microelectronics industry.

  • Specifications

    제품 Specifications

    Specifications

     

    ITEM

    SPECIFICATIONS

    System configuration 

    R&D 

    Substrate size 

    2” - 6” (50.8mm - 150mm) 

    Etch Uniformity 

    1.06±% within 3” wafer 

    Etch rate 

    1.16µm/min 

    Process Chamber 

    Al anodized Chamber 

    Substrate 

    He backside cooling / Bias / Chiller (-20 ~ 50) 

    Source 

    ICP source with plasma spiral coil 


    Specifications

     

    ITEM

    SPECIFICATIONS

    System configuration 

    R&D 

    Substrate size 

    2” - 6” (50.8mm - 150mm) 

    Etch Uniformity 

    1.06±% within 3” wafer 

    Etch rate 

    1.16µm/min 

    Process Chamber 

    Al anodized Chamber 

    Substrate 

    He backside cooling / Bias / Chiller (-20 ~ 50) 

    Source 

    ICP source with plasma spiral coil 


  • Options

  • Control

    제품 Control

    System Control


     Pumping

     

             The figure shows the pumping screen. Pumping 

     

           screens have valves and pumps. The pump and valve 

     

           are easily operated with one touch.

     

    o_1bsl16b69sn510a710go1fbc198ca.png

    o_1bsl16oqho0i1r191ia413ui1knba.png


    Gas Control

     

    This picture shows the gas control screen. 

    Interlock

     

    This picture shows the interlock screen. Basically, the 

    interlock is set so that it does not work when you 

    deviate from the correct method of use for your safety.

    o_1bsl17gtp4va13t51hij8lo2toa.png


    System Control


     Pumping

     

             The figure shows the pumping screen. Pumping 

     

           screens have valves and pumps. The pump and valve 

     

           are easily operated with one touch.

     

    o_1bsl16b69sn510a710go1fbc198ca.png

    o_1bsl16oqho0i1r191ia413ui1knba.png


    Gas Control

     

    This picture shows the gas control screen. 

    Interlock

     

    This picture shows the interlock screen. Basically, the 

    interlock is set so that it does not work when you 

    deviate from the correct method of use for your safety.

    o_1bsl17gtp4va13t51hij8lo2toa.png

  • 사용후기

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    사용후기가 없습니다.

  • 상품문의

    등록된 상품문의

    상품문의가 없습니다.

  • 배송/교환정보

    [배송]

    배송 안내 입력전입니다.

    [교환]

    교환/반품 안내 입력전입니다.

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