KVET-R2000L Seires > ETHCHER
메인으로

KVET-R2000L Seires 요약정보 및 구매

RIE Series

ETCHER
VACUUM EQUIPMENTS

Reactive ion Etching (RIE) is an etching technology that utilizes chemically reactive plasma to remove masked materials deposited on wafers during microfabrication.

목록
  • 제품 정보

    제품 상세설명

    Overview

     


     Reactive ion Etching (RIE) is an etching technology that utilizes chemically reactive

     

    plasma to remove masked materials deposited on wafers during microfabrication. The

     

    combination of an electromagnetic field in a low pressure (vacuum) environment is

     

    used to create a plasma source from which high energy ions attack a wafer surface and

     

    react.



    Features


     High selectivity, uniform plasma etching


     Simple configuration makes maintenance easy


     Negative self-bias forms on lower electrode


     Low damage & contamination

    Overview

     


     Reactive ion Etching (RIE) is an etching technology that utilizes chemically reactive

     

    plasma to remove masked materials deposited on wafers during microfabrication. The

     

    combination of an electromagnetic field in a low pressure (vacuum) environment is

     

    used to create a plasma source from which high energy ions attack a wafer surface and

     

    react.



    Features


     High selectivity, uniform plasma etching


     Simple configuration makes maintenance easy


     Negative self-bias forms on lower electrode


     Low damage & contamination

  • Specifications

    제품 Specifications

    Specifications

     

    ITEM

    SPECIFICATIONS

    System configuration

    R&D

    Substrate size

    2” - 6” (50.8mm - 150mm)

    Operating pressure (Torr)

    < 30mTorr

    Uniformity within substrate /

    substrate to substrate surfaces

    ± 5% max.

    Process Chamber

    Al anodized Chamber

    Substrate

    Heating or cooling / Bias

    Ultimate Pressure

    1.0E-6Torr

    Gas Nozzle

    6” - 8” shower head type


    Specifications

     

    ITEM

    SPECIFICATIONS

    System configuration

    R&D

    Substrate size

    2” - 6” (50.8mm - 150mm)

    Operating pressure (Torr)

    < 30mTorr

    Uniformity within substrate /

    substrate to substrate surfaces

    ± 5% max.

    Process Chamber

    Al anodized Chamber

    Substrate

    Heating or cooling / Bias

    Ultimate Pressure

    1.0E-6Torr

    Gas Nozzle

    6” - 8” shower head type

  • Options

  • Control

    제품 Control

    System Control 


     Pumping

     

            The figure shows the pumping screen. Pumping 

           screens have valves and  pumps. The pump and 

           valve are easily operated  with one touch.

     

    o_1btu14bp9qge1d2o1s24c1tqhda.png

    o_1btu14mr01hdfmlu4bvqo1ou3a.png


    Gas Control

     

    This picture shows the gas control screen. 

      

    Interlock

     

    This picture shows the interlock screen. 

    Basically, the interlock is set so that it does not work 

    when you deviate from the correct method of use for 

    your safety.

      
    o_1btu153rb17i812vrtfm4bj1qeda.png


    System Control 


     Pumping

     

            The figure shows the pumping screen. Pumping 

           screens have valves and  pumps. The pump and 

           valve are easily operated  with one touch.

     

    o_1btu14bp9qge1d2o1s24c1tqhda.png

    o_1btu14mr01hdfmlu4bvqo1ou3a.png


    Gas Control

     

    This picture shows the gas control screen. 

      

    Interlock

     

    This picture shows the interlock screen. 

    Basically, the interlock is set so that it does not work 

    when you deviate from the correct method of use for 

    your safety.

      
    o_1btu153rb17i812vrtfm4bj1qeda.png

     

  • 사용후기

    등록된 사용후기

    사용후기가 없습니다.

  • 상품문의

    등록된 상품문의

    상품문의가 없습니다.

  • 배송/교환정보

    [배송]

    배송 안내 입력전입니다.

    [교환]

    교환/반품 안내 입력전입니다.

선택된 옵션

  • KVET-R2000L Seires
    +0원

관련제품