The Optional Solution for Fabricating Josephson Junction, the Core of Superconducting Quantum Chips
Aluminum (Al) is the most ideal core material for the development of superconducting quantum computers today. The thin, uniform oxide film (Al₂O₃) that naturally forms on the surface of aluminum acts as a highly stable insulating layer, enabling precise control of minute currents and phases. Furthermore, its simple process and excellent reproducibility make it advantageous for fabricating large-scale quantum chips. Additionally, due to low noise generation, it excels at securing the long qubit coherence time essential for maintaining quantum information.
The JDR-E Series maximizes these unique properties of aluminum to provide the optimal hardware environment for fabricating the highest quality Josephson junctions.
Key Features
1) In-situ Oxidation: Through a system structure that enables an in-situ oxidation process immediately after aluminum (Al) deposition, a stable and uniform insulating layer (Al₂O₃) is formed without contamination.
2) Ultra-precision control and performance maximization: Based on high-quality junctions, it precisely controls current and phase, and minimizes noise to reliably secure long qubit coherence times.
3) Support for large-scale quantum chip mass production: Based on excellent process reproducibility, it is optimized for the research, development, and mass production of large-scale superconducting quantum chips, extending beyond single devices.
4) Expanded user-customizable options: Various thin-film control options, including ion beams, can be additionally configured, enabling a perfectly customized environment that meets the user's research and process objectives.
The Optional Solution for Fabricating Josephson Junction, the Core of Superconducting Quantum Chips
Aluminum (Al) is the most ideal core material for the development of superconducting quantum computers today. The thin, uniform oxide film (Al₂O₃) that naturally forms on the surface of aluminum acts as a highly stable insulating layer, enabling precise control of minute currents and phases. Furthermore, its simple process and excellent reproducibility make it advantageous for fabricating large-scale quantum chips. Additionally, due to low noise generation, it excels at securing the long qubit coherence time essential for maintaining quantum information.
The JDR-E Series maximizes these unique properties of aluminum to provide the optimal hardware environment for fabricating the highest quality Josephson junctions.
Key Features
1) In-situ Oxidation: Through a system structure that enables an in-situ oxidation process immediately after aluminum (Al) deposition, a stable and uniform insulating layer (Al₂O₃) is formed without contamination.
2) Ultra-precision control and performance maximization: Based on high-quality junctions, it precisely controls current and phase, and minimizes noise to reliably secure long qubit coherence times.
3) Support for large-scale quantum chip mass production: Based on excellent process reproducibility, it is optimized for the research, development, and mass production of large-scale superconducting quantum chips, extending beyond single devices.
4) Expanded user-customizable options: Various thin-film control options, including ion beams, can be additionally configured, enabling a perfectly customized environment that meets the user's research and process objectives.
Specifications
|
ITEM
|
SPECIFICATIONS
|
|
Process Chamber
|
Stainless steel
|
|
Oxidation Chamber
|
Stainless steel
|
|
Vacuum Pumping Station
|
Turbo molecular pump + Cryogenic Pump
|
|
Substrate Unit
|
SiC / 4”, 6", 8"
|
|
Loadlock Chamber
|
Stainless steel
|
|
Pressure Control Unit
|
Automatic
|
|
Vacuum Gauge Controller
|
ATM ~ 1.0E-10Torr
|
|
Gas Supply Unit
|
MFC (Ar, O2, N2, H2, etc..)
|
|
Power Supply Unit
|
E-Beam, Ion Beam, Sputter Gun, Cleaning, Annealing
|
|
Source Size
|
Optional item
|
|
Film Thickness Uniformity
|
Less than ± 2.99 %
|
|
Ultimate Pressure
|
Less than 1.99E-7 Torr |
Specifications
|
ITEM
|
SPECIFICATIONS
|
|
Process Chamber
|
Stainless steel
|
|
Oxidation Chamber
|
Stainless steel
|
|
Vacuum Pumping Station
|
Turbo molecular pump + Cryogenic Pump
|
|
Substrate Unit
|
SiC / 4”, 6", 8"
|
|
Loadlock Chamber
|
Stainless steel
|
|
Pressure Control Unit
|
Automatic
|
|
Vacuum Gauge Controller
|
ATM ~ 1.0E-10Torr
|
|
Gas Supply Unit
|
MFC (Ar, O2, N2, H2, etc..)
|
|
Power Supply Unit
|
E-Beam, Ion Beam, Sputter Gun, Cleaning, Annealing
|
|
Source Size
|
Optional item
|
|
Film Thickness Uniformity
|
Less than ± 2.99 %
|
|
Ultimate Pressure
|
Less than 1.99E-7 Torr |
Options
- Sample Cleaning
- Sample Annealing
- Automatic Control
- Etc... user requirements
Options
- Sample Cleaning
- Sample Annealing
- Automatic Control
- Etc... user requirements
- Full Automatic
- Full Automatic