Overview
Niobium (Nb) sputtering is an essential process for fabricating Josephson junctions. Niobium possesses a higher critical temperature and more stable superconducting properties than aluminum, enabling the fabrication of highly reliable quantum devices. The uniform and dense films formed through this sputtering process are optimized for large-scale integrated circuit fabrication, positioning it as a key foundational technology driving the development of superconducting quantum computers.
Overview
Niobium (Nb) sputtering is an essential process for fabricating Josephson junctions. Niobium possesses a higher critical temperature and more stable superconducting properties than aluminum, enabling the fabrication of highly reliable quantum devices. The uniform and dense films formed through this sputtering process are optimized for large-scale integrated circuit fabrication, positioning it as a key foundational technology driving the development of superconducting quantum computers.
Specifications
|
ITEM |
SPECIFICATIONS |
|
Process Chamber |
Stainless steel |
|
Vacuum Pumping Station |
Turbo molecular pump/Cryogenic pump |
|
Loadlock Chamber |
N/A (Optional item) |
|
Substrate Heating Unit |
SiC / 4”, 6”, 8" |
|
Sample Loading/Unloading Unit |
N/A (Optional item / Loadlock chamber) |
|
Pressure Control Unit |
Automatic |
|
Vacuum Gauge Controller |
ATM ~ 1.0E-10Torr |
|
Gas Supply Unit |
MFC (Ar, O2, N2, H2, etc..) |
|
Power Supply Unit |
RF / DC / Pulsed DC |
|
Target Size |
2”, 3”, 4”, 6" |
|
Film Thickness Uniformity |
Less than ± 2.99 % |
|
Ultimate Pressure |
Less than 9.90E-9 Torr |
Specifications
|
ITEM |
SPECIFICATIONS |
|
Process Chamber |
Stainless steel |
|
Vacuum Pumping Station |
Turbo molecular pump/Cryogenic pump |
|
Loadlock Chamber |
N/A (Optional item) |
|
Substrate Heating Unit |
SiC / 4”, 6”, 8" |
|
Sample Loading/Unloading Unit |
N/A (Optional item / Loadlock chamber) |
|
Pressure Control Unit |
Automatic |
|
Vacuum Gauge Controller |
ATM ~ 1.0E-10Torr |
|
Gas Supply Unit |
MFC (Ar, O2, N2, H2, etc..) |
|
Power Supply Unit |
RF / DC / Pulsed DC |
|
Target Size |
2”, 3”, 4”, 6" |
|
Film Thickness Uniformity |
Less than ± 2.99 % |
|
Ultimate Pressure |
Less than 9.90E-9 Torr |
Options
- Plasma Cleaning
- RF/DC Bias Heater
- Automatic Control
- Etc... user requirements
Options
- Plasma Cleaning
- RF/DC Bias Heater
- Automatic Control
- Etc... user requirements
System Control
For further inquiries, please contact our company.
System Control
For further inquiries, please contact our company.