JDR-S Series > Applications
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JDR-S Series 요약정보 및 구매

By harnessing the superior stability and higher critical temperature of Niobium, the JDR-S series delivers the ultimate sputtering solution for fabricating highly reliable Josephson junctions.

- UHV Type Chamber
- Max 8" Substrate
- Max 6" Sputter gun(1ea ~ 4ea)
- RF/DC/Pulsed DC Power supply

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https://blog.naver.com/korea_vacuum_tech/224251628934

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  • 제품 정보

    제품 상세설명

    Overview

     

    Niobium (Nb) sputtering is an essential process for fabricating Josephson junctions. Niobium possesses a higher critical temperature and more stable superconducting properties than aluminum, enabling the fabrication of highly reliable quantum devices. The uniform and dense films formed through this sputtering process are optimized for large-scale integrated circuit fabrication, positioning it as a key foundational technology driving the development of superconducting quantum computers.

    Overview

     

    Niobium (Nb) sputtering is an essential process for fabricating Josephson junctions. Niobium possesses a higher critical temperature and more stable superconducting properties than aluminum, enabling the fabrication of highly reliable quantum devices. The uniform and dense films formed through this sputtering process are optimized for large-scale integrated circuit fabrication, positioning it as a key foundational technology driving the development of superconducting quantum computers.

  • Specifications

    제품 Specifications

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber 

    Stainless steel 

    Vacuum Pumping Station 

    Turbo molecular pump/Cryogenic pump 

    Loadlock Chamber 

    N/A (Optional item) 

    Substrate Heating Unit 

    SiC / 4”, 6”, 8"

    Sample Loading/Unloading Unit 

    N/A (Optional item / Loadlock chamber) 

    Pressure Control Unit 

    Automatic 

    Vacuum Gauge Controller 

    ATM ~ 1.0E-10Torr 

    Gas Supply Unit 

    MFC (Ar, O2, N2, H2, etc..) 

    Power Supply Unit 

    RF / DC / Pulsed DC 

    Target Size 

    2”, 3”, 4”, 6"

    Film Thickness Uniformity 

    Less than ± 2.99 % 

    Ultimate Pressure 

    Less than 9.90E-9 Torr

     

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber 

    Stainless steel 

    Vacuum Pumping Station 

    Turbo molecular pump/Cryogenic pump 

    Loadlock Chamber 

    N/A (Optional item) 

    Substrate Heating Unit 

    SiC / 4”, 6”, 8"

    Sample Loading/Unloading Unit 

    N/A (Optional item / Loadlock chamber) 

    Pressure Control Unit 

    Automatic 

    Vacuum Gauge Controller 

    ATM ~ 1.0E-10Torr 

    Gas Supply Unit 

    MFC (Ar, O2, N2, H2, etc..) 

    Power Supply Unit 

    RF / DC / Pulsed DC 

    Target Size 

    2”, 3”, 4”, 6"

    Film Thickness Uniformity 

    Less than ± 2.99 % 

    Ultimate Pressure 

    Less than 9.90E-9 Torr

     

  • Options

    제품 Options

    Options

     

    - Plasma Cleaning

    - RF/DC Bias Heater

    - Automatic Control

    - Etc... user requirements

     

    Options

     

    - Plasma Cleaning

    - RF/DC Bias Heater

    - Automatic Control

    - Etc... user requirements

     

  • Control

    제품 Control

    System Control

     

    For further inquiries, please contact our company.

    System Control

     

    For further inquiries, please contact our company.

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    [교환]

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  • JDR-S Series
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