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JDR-E Series 요약정보 및 구매

By maximizing the unique properties of aluminum, the JDR-E series delivers the ultimate hardware solution for producing top-tier Josephson junctions.

- UHV Type Chamber(Oxidation Chamber)
- Max 8" substrate
- Tilt Type Substrate
- E-Beam Source
- Ion Beam Source

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https://blog.naver.com/korea_vacuum_tech/224251628934

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  • 제품 정보

    제품 상세설명

     The Optional Solution for Fabricating Josephson Junction, the Core of Superconducting Quantum Chips

     

    Aluminum (Al) is the most ideal core material for the development of superconducting quantum computers today. The thin, uniform oxide film (Al₂O₃) that naturally forms on the surface of aluminum acts as a highly stable insulating layer, enabling precise control of minute currents and phases. Furthermore, its simple process and excellent reproducibility make it advantageous for fabricating large-scale quantum chips. Additionally, due to low noise generation, it excels at securing the long qubit coherence time essential for maintaining quantum information.


    The JDR-E Series maximizes these unique properties of aluminum to provide the optimal hardware environment for fabricating the highest quality Josephson junctions.


    Key Features


    1) In-situ Oxidation: Through a system structure that enables an in-situ oxidation process immediately after aluminum (Al) deposition, a stable and uniform insulating layer (Al₂O₃) is formed without contamination. 

     

    2) Ultra-precision control and performance maximization: Based on high-quality junctions, it precisely controls current and phase, and minimizes noise to reliably secure long qubit coherence times.


    3) Support for large-scale quantum chip mass production: Based on excellent process reproducibility, it is optimized for the research, development, and mass production of large-scale superconducting quantum chips, extending beyond single devices.


    4) Expanded user-customizable options: Various thin-film control options, including ion beams, can be additionally configured, enabling a perfectly customized environment that meets the user's research and process objectives.

      

     The Optional Solution for Fabricating Josephson Junction, the Core of Superconducting Quantum Chips

     

    Aluminum (Al) is the most ideal core material for the development of superconducting quantum computers today. The thin, uniform oxide film (Al₂O₃) that naturally forms on the surface of aluminum acts as a highly stable insulating layer, enabling precise control of minute currents and phases. Furthermore, its simple process and excellent reproducibility make it advantageous for fabricating large-scale quantum chips. Additionally, due to low noise generation, it excels at securing the long qubit coherence time essential for maintaining quantum information.


    The JDR-E Series maximizes these unique properties of aluminum to provide the optimal hardware environment for fabricating the highest quality Josephson junctions.


    Key Features


    1) In-situ Oxidation: Through a system structure that enables an in-situ oxidation process immediately after aluminum (Al) deposition, a stable and uniform insulating layer (Al₂O₃) is formed without contamination. 

     

    2) Ultra-precision control and performance maximization: Based on high-quality junctions, it precisely controls current and phase, and minimizes noise to reliably secure long qubit coherence times.


    3) Support for large-scale quantum chip mass production: Based on excellent process reproducibility, it is optimized for the research, development, and mass production of large-scale superconducting quantum chips, extending beyond single devices.


    4) Expanded user-customizable options: Various thin-film control options, including ion beams, can be additionally configured, enabling a perfectly customized environment that meets the user's research and process objectives.

     

  • Specifications

    제품 Specifications

     

     Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber

    Stainless steel

    Oxidation Chamber

    Stainless steel

    Vacuum Pumping Station

    Turbo molecular pump + Cryogenic Pump

    Substrate Unit

    SiC / 2”, 3”, 4”, 6", 8"

    Loadlock Chamber

    N/A(Optional item)

    Pressure Control Unit

    Automatic

    Vacuum Gauge Controller

    ATM ~ 1.0E-10Torr

    Gas Supply Unit

    MFC (Ar, O2, N2, H2, etc..)

    Power Supply Unit

    E-Beam, Ion Beam

    Source Size

    Optional item

    Film Thickness Uniformity

    Less than ± 2.99 %

    Ultimate Pressure

    Less than 9.90E-9 Torr

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber

    Stainless steel

    Oxidation Chamber

    Stainless steel

    Vacuum Pumping Station

    Turbo molecular pump + Cryogenic Pump

    Substrate Unit

    SiC / 2”, 3”, 4”, 6", 8"

    Loadlock Chamber

    N/A(Optional item)

    Pressure Control Unit

    Automatic

    Vacuum Gauge Controller

    ATM ~ 1.0E-10Torr

    Gas Supply Unit

    MFC (Ar, O2, N2, H2, etc..)

    Power Supply Unit

    E-Beam, Ion Beam

    Source Size

    Optional item

    Film Thickness Uniformity

    Less than ± 2.99 %

    Ultimate Pressure

    Less than 9.90E-9 Torr

     

     

  • Options

    제품 Options

    Options

     

    - Loadlock Chamber

    - Sample Cleaning

    - Sample Annealing

    - Automatic Control

    - Etc... user requirements

     

    Options

     

    - Loadlock Chamber

    - Sample Cleaning

    - Sample Annealing

    - Automatic Control

    - Etc... user requirements

     

  • Control

    제품 Control

    System Control

     

    - Manual

    - Semi-Automatic

    - Full Automatic

    System Control

     

    - Manual

    - Semi-Automatic

    - Full Automatic

     

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  • 배송/교환정보

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    [교환]

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선택된 옵션

  • JDR-E Series
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