Overview
Ion beam etching is a microfabrication process essential for fabricating Josephson junctions.
Josephson junctions, which involve nanometer-thick insulating and superconducting layers, require extreme precision. Ion beam etching selectively removes only unnecessary components, creating a clean and uniform junction surface and optimizing intermetal contact characteristics to ensure stable supercurrent flow. This precision processing technology is a key enabler for high-performance qubit implementation and large-scale quantum chip fabrication.
Overview
Ion beam etching is a microfabrication process essential for fabricating Josephson junctions.
Josephson junctions, which involve nanometer-thick insulating and superconducting layers, require extreme precision. Ion beam etching selectively removes only unnecessary components, creating a clean and uniform junction surface and optimizing intermetal contact characteristics to ensure stable supercurrent flow. This precision processing technology is a key enabler for high-performance qubit implementation and large-scale quantum chip fabrication.
Specifications
|
ITEM |
SPECIFICATIONS |
|
Process Chamber |
Stainless steel |
|
Vacuum Pumping Station |
Turbo molecular pump + R.P/D.P |
|
Loadlock Chamber |
Option |
|
Substrate Unit |
4”, 6” Tilt Type |
|
Sample Loading/Unloading Unit |
Full auto / Semi-auto (with loadlock chamber) |
|
Pressure Control Unit |
Automatic |
|
Vacuum Gauge Controller |
ATM ~ 1.0E-10Torr |
|
Gas Supply Unit |
MFC (Ar, O2, N2, H2, etc..) |
|
Power Supply Unit |
RF ICP / ECR |
|
|
|
|
Film Thickness Uniformity |
Less than ± 2.99 % |
|
Ultimate Pressure |
Less than 1.99E-7 Torr |
Specifications
|
ITEM |
SPECIFICATIONS |
|
Process Chamber |
Stainless steel |
|
Vacuum Pumping Station |
Turbo molecular pump + R.P/D.P |
|
Loadlock Chamber |
Option |
|
Substrate Unit |
4”, 6” Tilt Type |
|
Sample Loading/Unloading Unit |
Full auto / Semi-auto (with loadlock chamber) |
|
Pressure Control Unit |
Automatic |
|
Vacuum Gauge Controller |
ATM ~ 1.0E-10Torr |
|
Gas Supply Unit |
MFC (Ar, O2, N2, H2, etc..) |
|
Power Supply Unit |
RF ICP / ECR |
|
|
|
|
Film Thickness Uniformity |
Less than ± 2.99 % |
|
Ultimate Pressure |
Less than 1.99E-7 Torr |
Options
- Loadlock Chamber
- Ion Source
- Reactive Gas
- Automatic Control
- Etc... user requirements
Options
- Loadlock Chamber
- Ion Source
- Reactive Gas
- Automatic Control
- Etc... user requirements