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JDR-I Series 요약정보 및 구매

With free control of the ion beam incidence angle and a real-time monitoring system, it enables precise etching profiles even in complex nanostructures and minimizes sample damage.

Ion Beam Etching System
- Max 6" wafer
- Substrate Tilt(>±120°, step 0.2°)
- Backside Cooling
- Ion Source
- Etching of key quantum device materials, including diamond, silicon, carbide, lithium niobate, lithium tantalate, and III-V materials.

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  • 제품 정보

    제품 상세설명

    Overview

     

    Ion beam etching is a microfabrication process essential for fabricating Josephson junctions.

    Josephson junctions, which involve nanometer-thick insulating and superconducting layers, require extreme precision. Ion beam etching selectively removes only unnecessary components, creating a clean and uniform junction surface and optimizing intermetal contact characteristics to ensure stable supercurrent flow. This precision processing technology is a key enabler for high-performance qubit implementation and large-scale quantum chip fabrication.

    Overview

     

    Ion beam etching is a microfabrication process essential for fabricating Josephson junctions.

    Josephson junctions, which involve nanometer-thick insulating and superconducting layers, require extreme precision. Ion beam etching selectively removes only unnecessary components, creating a clean and uniform junction surface and optimizing intermetal contact characteristics to ensure stable supercurrent flow. This precision processing technology is a key enabler for high-performance qubit implementation and large-scale quantum chip fabrication.

  • Specifications

    제품 Specifications

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber 

    Stainless steel 

    Vacuum Pumping Station 

    Turbo molecular pump + R.P/D.P

    Loadlock Chamber 

    Option 

    Substrate Unit 

     4”, 6” Tilt Type

    Sample Loading/Unloading Unit 

    Full auto / Semi-auto (with loadlock chamber)

    Pressure Control Unit 

    Automatic 

    Vacuum Gauge Controller 

    ATM ~ 1.0E-10Torr 

    Gas Supply Unit 

    MFC (Ar, O2, N2, H2, etc..) 

    Power Supply Unit 

    RF ICP / ECR


    Film Thickness Uniformity 

    Less than ± 2.99 % 

    Ultimate Pressure 

    Less than 1.99E-7 Torr

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber 

    Stainless steel 

    Vacuum Pumping Station 

    Turbo molecular pump + R.P/D.P

    Loadlock Chamber 

    Option 

    Substrate Unit 

     4”, 6” Tilt Type

    Sample Loading/Unloading Unit 

    Full auto / Semi-auto (with loadlock chamber)

    Pressure Control Unit 

    Automatic 

    Vacuum Gauge Controller 

    ATM ~ 1.0E-10Torr 

    Gas Supply Unit 

    MFC (Ar, O2, N2, H2, etc..) 

    Power Supply Unit 

    RF ICP / ECR


    Film Thickness Uniformity 

    Less than ± 2.99 % 

    Ultimate Pressure 

    Less than 1.99E-7 Torr

  • Options

    제품 Options

    Options

     

    - Loadlock Chamber

    - Ion Source

    - Reactive Gas

    - Automatic Control

    - Etc... user requirements

    Options

     

    - Loadlock Chamber

    - Ion Source

    - Reactive Gas

    - Automatic Control

    - Etc... user requirements

  • Control

    제품 Control

     


     

     


     

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