KVS-5000 > Sputter
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KVS-5000 요약정보 및 구매

SPUTTER VACUUM EQUIPMENTS

Excellent Thickness Uniformity

The RF and DC Sputtering System from Korea Vacuum Tech, Ltd. provides excellent thickness uniformity of resultant films even for substrates that are the same diameter as the sputtering cathode assembly.

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  • 제품 정보

    제품 상세설명

    Overview


     

    Sputter deposition is a technique used to deposit thin films of a material onto a surface

     

    (substrate). Atoms and ions of a given material are made to collide. The resulting

     

    momentum exchange disperses incident ions which further perpetuate activity setting

     

    off collision cascades in the target. This activity drives the sputtering process. When

     

    such cascades recoil and reach the target surface with an energy above the surface

     

    binding energy, and atom can be ejected. If the target is thin on an atomic scale the

     

    collision cascade can reach the back side of the target and atoms can escape the

     

    surface binding energy in transmission. The average number of atoms ejected from the

     

    target per incident ion is called the “sputter yield” and depends on the ion incident

     

    angle, the energy of the ion, the masses of the ion and target atoms, and the surface



    Features


     Ideal for Individual Sputtering of metal and non-metal


     Multi-Layer Deposition

            Multiple cathode assemblies provide for sequential multi-layer or complex alloy deposition in Situ.


     Cross driven wafer transfer

            These systems have two process chamber and one loadlock chamber. After process chamber

            has been completed the process, wafer transfer equipment transports the sample to another chamber automatically.


    Overview


     

    Sputter deposition is a technique used to deposit thin films of a material onto a surface

     

    (substrate). Atoms and ions of a given material are made to collide. The resulting

     

    momentum exchange disperses incident ions which further perpetuate activity setting

     

    off collision cascades in the target. This activity drives the sputtering process. When

     

    such cascades recoil and reach the target surface with an energy above the surface

     

    binding energy, and atom can be ejected. If the target is thin on an atomic scale the

     

    collision cascade can reach the back side of the target and atoms can escape the

     

    surface binding energy in transmission. The average number of atoms ejected from the

     

    target per incident ion is called the “sputter yield” and depends on the ion incident

     

    angle, the energy of the ion, the masses of the ion and target atoms, and the surface



    Features


     Ideal for Individual Sputtering of metal and non-metal


     Multi-Layer Deposition

            Multiple cathode assemblies provide for sequential multi-layer or complex alloy deposition in Situ.


     Cross driven wafer transfer

            These systems have two process chamber and one loadlock chamber. After process chamber

            has been completed the process, wafer transfer equipment transports the sample to another chamber automatically.


  • Specifications

    제품 Specifications

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber 

    Two, Stainless steel 

    Vacuum Pumping Station 

    Turbo molecular pump 

    Loadlock Chamber 

    Stainless steel 

    Substrate Heating Unit 

    2”, 3”, 4”, 6”, 8” 

    Sample Loading/Unloading Unit 

    Two transfer (Option: Robot arm) 

    Pressure Control Unit 

    Auto / Semi-auto / Manual 

    Vacuum Gauge Controller 

    ATM ~ 1.0E-10Torr 

    Gas Supply Unit 

    MFC (Ar, O2, N2, H2, etc..) 

    Power Supply Unit 

    RF / DC / Pulsed DC 

    Target Size 

    2”, 3”, 4” 

    Film Thickness Uniformity 

    Less than ±5% 

    Ultimate Pressure 

    Less than 5.0E-9Torr @ Metal

                           Less than 5.0E-7Torr @ Non-metal 


    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber 

    Two, Stainless steel 

    Vacuum Pumping Station 

    Turbo molecular pump 

    Loadlock Chamber 

    Stainless steel 

    Substrate Heating Unit 

    2”, 3”, 4”, 6”, 8” 

    Sample Loading/Unloading Unit 

    Two transfer (Option: Robot arm) 

    Pressure Control Unit 

    Auto / Semi-auto / Manual 

    Vacuum Gauge Controller 

    ATM ~ 1.0E-10Torr 

    Gas Supply Unit 

    MFC (Ar, O2, N2, H2, etc..) 

    Power Supply Unit 

    RF / DC / Pulsed DC 

    Target Size 

    2”, 3”, 4” 

    Film Thickness Uniformity 

    Less than ±5% 

    Ultimate Pressure 

    Less than 5.0E-9Torr @ Metal

                           Less than 5.0E-7Torr @ Non-metal 

  • Options

  • Control

    제품 Control

    System Control



     

         Pumping

          The figure shows the pumping screen. Pumping 

          screens have valves and pumps. The pump and 

          valve are easily operated with one touch. 


    o_1bskt11p21qf51jl172n8qp5e6a.png

    o_1bskt1dsj13f0d2m1hc4khe5nma.png


    Shutter

    This screen shows the shutter screen. There are buttons 

    on the screen to operate the substrate shutter, the gas 

    valve, and the sputter gun shutter

     

     System Control



     

         Pumping

          The figure shows the pumping screen. Pumping 

          screens have valves and pumps. The pump and 

          valve are easily operated with one touch. 


    o_1bskt11p21qf51jl172n8qp5e6a.png

    o_1bskt1dsj13f0d2m1hc4khe5nma.png


    Shutter

    This screen shows the shutter screen. There are buttons 

    on the screen to operate the substrate shutter, the gas 

    valve, and the sputter gun shutter

     

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  • 배송/교환정보

    [배송]

    배송 안내 입력전입니다.

    [교환]

    교환/반품 안내 입력전입니다.

선택된 옵션

  • KVS-5000
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