Overview
Josephson junction fabrication requires extreme precision, and ion beam etching and sputtering are key processes for achieving this. Ion beam etching selectively removes unnecessary film to ensure a clean and uniform bonding surface, while sputtering deposits a precise and uniform film of superconducting metals such as neodymium (Nb) or aluminum (Al).
Our integrated vacuum system is designed to perform these two processes continuously within a single chamber.
Contamination is minimized by eliminating sample exposure to the atmosphere between processes.
This system simultaneously meets the stability, precision, and efficiency demands of researchers and industrial sites, providing the optimal solution for the development of next-generation superconducting quantum computers.
Overview
Josephson junction fabrication requires extreme precision, and ion beam etching and sputtering are key processes for achieving this. Ion beam etching selectively removes unnecessary film to ensure a clean and uniform bonding surface, while sputtering deposits a precise and uniform film of superconducting metals such as neodymium (Nb) or aluminum (Al).
Our integrated vacuum system is designed to perform these two processes continuously within a single chamber.
Contamination is minimized by eliminating sample exposure to the atmosphere between processes.
This system simultaneously meets the stability, precision, and efficiency demands of researchers and industrial sites, providing the optimal solution for the development of next-generation superconducting quantum computers.
Specifications
|
ITEM
|
SPECIFICATIONS
|
|
Process Chamber
|
Stainless steel
|
|
Vacuum Pumping Station
|
Turbo molecular pump
|
|
Loadlock Chamber
|
Option
|
|
Substrate Heating Unit
|
SiC / 2”, 3”, 4”, 6"
|
|
Sample Loading/Unloading Unit
|
Option
|
|
Pressure Control Unit
|
Auto / Semi-auto / Manual
|
|
Vacuum Gauge Controller
|
ATM ~ 1.0E-10Torr
|
|
Ion Beam
|
Option
|
|
Power Supply Unit
|
RF / DC / Pulsed DC, Ion Source
|
|
Target Size
|
2”, 3",4"
|
|
Film Thickness Uniformity
|
Less than ± 2.99 %
|
|
Ultimate Pressure
|
Less than 1.99E-7 Torr |
Specifications
|
ITEM
|
SPECIFICATIONS
|
|
Process Chamber
|
Stainless steel
|
|
Vacuum Pumping Station
|
Turbo molecular pump
|
|
Loadlock Chamber
|
Option
|
|
Substrate Heating Unit
|
SiC / 2”, 3”, 4”, 6"
|
|
Sample Loading/Unloading Unit
|
Option
|
|
Pressure Control Unit
|
Auto / Semi-auto / Manual
|
|
Vacuum Gauge Controller
|
ATM ~ 1.0E-10Torr
|
|
Ion Beam
|
Option
|
|
Power Supply Unit
|
RF / DC / Pulsed DC, Ion Source
|
|
Target Size
|
2”, 3",4"
|
|
Film Thickness Uniformity
|
Less than ± 2.99 %
|
|
Ultimate Pressure
|
Less than 1.99E-7 Torr |
Options
- Loadlock Chamber
- Heater/Cooler
- Automatic Control
- Etc... user requirements
Options
- Loadlock Chamber
- Heater/Cooler
- Automatic Control
- Etc... user requirements