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It is a hybrid system combining thin-film deposition (sputtering) and precision etching functions for the fabrication of nanostructures of Josephson devices, forming the optimal oxide interface that determines the performance of superconducting quantum devices.

A system capable of processing sputtering and ion milling in a single chamber

- Substrate Tilt
- 4" Sputter gun(4ea)
- Ion Beam Source

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https://blog.naver.com/korea_vacuum_tech/224284283087

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  • 제품 정보

    제품 상세설명

    Overview

     

     

    Josephson junction fabrication requires extreme precision, and ion beam etching and sputtering are key processes for achieving this. Ion beam etching selectively removes unnecessary film to ensure a clean and uniform bonding surface, while sputtering deposits a precise and uniform film of superconducting metals such as neodymium (Nb) or aluminum (Al).

    Our integrated vacuum system is designed to perform these two processes continuously within a single chamber.

     

    Contamination is minimized by eliminating sample exposure to the atmosphere between processes.

     

    This system simultaneously meets the stability, precision, and efficiency demands of researchers and industrial sites, providing the optimal solution for the development of next-generation superconducting quantum computers.

    Overview

     

     

    Josephson junction fabrication requires extreme precision, and ion beam etching and sputtering are key processes for achieving this. Ion beam etching selectively removes unnecessary film to ensure a clean and uniform bonding surface, while sputtering deposits a precise and uniform film of superconducting metals such as neodymium (Nb) or aluminum (Al).

    Our integrated vacuum system is designed to perform these two processes continuously within a single chamber.

     

    Contamination is minimized by eliminating sample exposure to the atmosphere between processes.

     

    This system simultaneously meets the stability, precision, and efficiency demands of researchers and industrial sites, providing the optimal solution for the development of next-generation superconducting quantum computers.

  • Specifications

    제품 Specifications

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber

    Stainless steel

    Vacuum Pumping Station

    Turbo molecular pump

    Loadlock Chamber

    Option

    Substrate Heating Unit

    SiC / 2”, 3”, 4”, 6"

    Sample Loading/Unloading Unit

    Option

    Pressure Control Unit

    Auto / Semi-auto / Manual

    Vacuum Gauge Controller

    ATM ~ 1.0E-10Torr

    Ion Beam

    Option

    Power Supply Unit

    RF / DC / Pulsed DC, Ion Source

    Target Size

    2”, 3",4"

    Film Thickness Uniformity

    Less than ± 2.99 %

    Ultimate Pressure

    Less than 1.99E-7 Torr

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber

    Stainless steel

    Vacuum Pumping Station

    Turbo molecular pump

    Loadlock Chamber

    Option

    Substrate Heating Unit

    SiC / 2”, 3”, 4”, 6"

    Sample Loading/Unloading Unit

    Option

    Pressure Control Unit

    Auto / Semi-auto / Manual

    Vacuum Gauge Controller

    ATM ~ 1.0E-10Torr

    Ion Beam

    Option

    Power Supply Unit

    RF / DC / Pulsed DC, Ion Source

    Target Size

    2”, 3",4"

    Film Thickness Uniformity

    Less than ± 2.99 %

    Ultimate Pressure

    Less than 1.99E-7 Torr

  • Options

    제품 Options

    Options

     

    - Loadlock Chamber

    - Heater/Cooler

    - Automatic Control

    - Etc... user requirements

    Options

     

    - Loadlock Chamber

    - Heater/Cooler

    - Automatic Control

    - Etc... user requirements

  • Control

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  • 상품문의

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  • 배송/교환정보

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    [교환]

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