Sputter Deposition System [KVS-8000] > KVS-8000 Series
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Sputter Deposition System [KVS-8000] 요약정보 및 구매

Sputter system suitable for mass production lines with top performance(제품 생산에 최적화 되어 있는 스퍼터 시스템)

- Max 12" substrate
- Max 8"" Tilt magnetron sputter gun(1ea~4ea)
- RF/DC/Pulsed DC Power supply
- Full automatic control

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https://blog.naver.com/korea_vacuum_tech/224284283087

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  • 제품 정보

    제품 상세설명

    Overview


     

    Sputter deposition is a technique used to deposit thin films of a material onto a surface

     

    (substrate). Atoms and ions of a given material are made to collide. The resulting

     

    momentum exchange disperses incident ions which further perpetuate activity setting

     

    off collision cascades in the target. This activity drives the sputtering process. When

     

    such cascades recoil and reach the target surface with an energy above the surface

     

    binding energy, and atom can be ejected. If the target is thin on an atomic scale the

     

    collision cascade can reach the back side of the target and atoms can escape the

     

    surface binding energy in transmission. The average number of atoms ejected from the

     

    target per incident ion is called the “sputter yield” and depends on the ion incident

     

    angle, the energy of the ion, the masses of the ion and target atoms, and the surface

     

    binding energy of atoms in the target.



    Features

     

    Excellent Thickness Uniformity

            The KVS Series RF&DC Sputtering System provide excellent thickness uniformity of

            resultant films even for substrates that have the same diameter as the sputtering cathode assembly


    Full Auto control

            These systems provide the ‘auto button’ to user for convenience of user. Fully automated vacuum

            process control system.

    Overview


     

    Sputter deposition is a technique used to deposit thin films of a material onto a surface

     

    (substrate). Atoms and ions of a given material are made to collide. The resulting

     

    momentum exchange disperses incident ions which further perpetuate activity setting

     

    off collision cascades in the target. This activity drives the sputtering process. When

     

    such cascades recoil and reach the target surface with an energy above the surface

     

    binding energy, and atom can be ejected. If the target is thin on an atomic scale the

     

    collision cascade can reach the back side of the target and atoms can escape the

     

    surface binding energy in transmission. The average number of atoms ejected from the

     

    target per incident ion is called the “sputter yield” and depends on the ion incident

     

    angle, the energy of the ion, the masses of the ion and target atoms, and the surface

     

    binding energy of atoms in the target.



    Features

     

    Excellent Thickness Uniformity

            The KVS Series RF&DC Sputtering System provide excellent thickness uniformity of

            resultant films even for substrates that have the same diameter as the sputtering cathode assembly


    Full Auto control

            These systems provide the ‘auto button’ to user for convenience of user. Fully automated vacuum

            process control system.

  • Specifications

    제품 Specifications

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber 

    Stainless steel 

    Vacuum Pumping Station 

    Turbo molecular pump 

    Loadlock Chamber 

    Stainless steel 

    Substrate Heating Unit 

     8”, 12" 

    Sample Loading/Unloading Unit 

    Full Automatic

    Pressure Control Unit 

    Automatic 

    Vacuum Gauge Controller 

    ATM ~ 1.0E-10Torr 

    Gas Supply Unit 

    MFC (Ar, O2, N2, H2, etc..) 

    Power Supply Unit 

    RF / DC / Pulsed DC 

    Target Size 

    6”, 8" 

    Film Thickness Uniformity 

    Less than ± 1.99 % 

    Base Pressure 


    Less than 1.99E-7 Torr / 1 Hour (Process Chamber)

    Less than 4.99E-6 Torr / 1 Hour (loadlock Chamber)

    CE Certification   Acquired   

    Specifications

     

    ITEM

    SPECIFICATIONS

    Process Chamber 

    Stainless steel 

    Vacuum Pumping Station 

    Turbo molecular pump 

    Loadlock Chamber 

    Stainless steel 

    Substrate Heating Unit 

     8”, 12" 

    Sample Loading/Unloading Unit 

    Full Automatic

    Pressure Control Unit 

    Automatic 

    Vacuum Gauge Controller 

    ATM ~ 1.0E-10Torr 

    Gas Supply Unit 

    MFC (Ar, O2, N2, H2, etc..) 

    Power Supply Unit 

    RF / DC / Pulsed DC 

    Target Size 

    6”, 8" 

    Film Thickness Uniformity 

    Less than ± 1.99 % 

    Base Pressure 


    Less than 1.99E-7 Torr / 1 Hour (Process Chamber)

    Less than 4.99E-6 Torr / 1 Hour (loadlock Chamber)

    CE Certification   Acquired   
  • Options

    제품 Options

    Options

     

    - UHV Type Chamber(Less than 9.90E-9 Torr)

    - Cassette Chamber

    - Plasma Cleaning

    - RF/DC Bias Heater

    - Etc... user requirements

    Options

     

    - UHV Type Chamber(Less than 9.90E-9 Torr)

    - Cassette Chamber

    - Plasma Cleaning

    - RF/DC Bias Heater

    - Etc... user requirements

  • Control

  • 사용후기

    등록된 사용후기

    사용후기가 없습니다.

  • 상품문의

    등록된 상품문의

    상품문의가 없습니다.

  • 배송/교환정보

    [배송]

    배송 안내 입력전입니다.

    [교환]

    교환/반품 안내 입력전입니다.

선택된 옵션

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