Overview

This is a state-of-the-art thin film deposition system equipped with two independently controlled e-beam sources, enabling the simultaneous, precise co-deposition of different deposition materials.

Moving away from conventional sequential deposition methods, it achieves nanometer-scale fine thickness control and perfect high-precision alloy composition in a single process. It offers exceptional flexibility that transcends process limitations, covering oxides, metals, and high-melting-point materials.

Features 

≻ Independently Controlled Dual E-Beam Source

By applying individual RF/DC power supplies and independent Quartz Crystal Sensor (QCM) monitoring systems to two E-beam sources, the deposition rate of each material is perfectly controlled in real time.

≻ Precise Co-Deposition Algorithm

It enables the simultaneous deposition of heterogeneous materials while accurately maintaining the desired stoichiometry, making it optimized for the formation of high-quality, highly integrated compound thin films and multilayer structures.

Specifications

Options

- UHV Type Chamber(Less than 9.90E-9 Torr) 

- Loadlock Chamber

- Sample Cleaning

- Power Selection

- Substrate Heating/Cooling

- Lift-Off plate

- Etc... user requirements